arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 577 records · Page 32Linked to original sources

arXiv2025

Observation of High-Temperature Dissipationless Fractional Chern Insulator

The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a few k$Ω$), even though the anomalous Hall resistance $R_{xy}$ is quantized. This dissipative behavior is likely linked to imperfect sample quality. Here, we report transport measurements of a drastically improved twisted $\text{MoTe}_2$ bilayer device, which exhibits quantized $R_{xy}$ and vanishing $R_{xx}$ for the $-2/3$ state, marking a dissipationless FCI. Contrary to fractional quantum Hall states where the energy gap increases with magnetic field, we find that the thermal activation gap of the observed FCI states decreases rapidly as the magnetic field rises from zero, then plateaus above a few teslas. This observation is attributed to the interplay between spin and charge gaps. Due to the spontaneous ferromagnetism, the spin gap dominates at low field, while the charge gap becomes appreciable once the magnetic field freezes spin fluctuations. For the $-2/3$ state, we estimate the spin and FCI gap of about 55 and 20 K, respectively. Our results provide insights into the energy scale of FCI and offer a pathway for quantum engineering of exotic correlated topological states.

cond-mat.mes-hall↗

arXiv2025

Sub-wavelength optical lattice in 2D materials

Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges using metasurface plasmon polaritons (MPPs) to form a sub-wavelength optical lattice. Specifically, we report a ``non-local" pump-probe scheme where MPPs are excited to induce a spatially modulated AC Stark shift for excitons in a monolayer of MoSe$_2$, several microns away from the illumination spot. Remarkably, we identify nearly two orders of magnitude reduction for the required modulation power compared to the free-space optical illumination counterpart. Moreover, we demonstrate a broadening of the excitons' linewidth as a robust signature of MPP-induced periodic sub-diffraction modulation. Our results will allow exploring power-efficient light-induced lattice phenomena below the diffraction limit in active chip-compatible MPP architectures.

cond-mat.mes-hall↗

arXiv2025

Anomalous Meets Topological Hall Effect in Cr2Ge2Te6 Heterostructures

Introducing topologically protected skyrmions in graphene holds significant importance for developing high-speed, low-energy spintronic devices. Here, we present a centrosymmetric ferromagnetic graphene/trilayer Cr2Ge2Te6/graphene heterostructure, demonstrating the anomalous and topological Hall effect due to the magnetic proximity effect. Through gate voltage control, we effectively tune the emergence and size of skyrmions. Micromagnetic simulations reveal the formation of skyrmions and antiskyrmions, which respond differently to external magnetic fields, leading to oscillations in the topological Hall signal. Our findings provide a novel pathway for the formation and manipulation of skyrmions in centrosymmetric two-dimensional magnetic systems, offering significant insights for developing topological spintronics.

cond-mat.mes-hall↗

arXiv2025

Magnetic Correlation Spectroscopy in CrSBr

CrSBr is an air-stable magnetic van der Waals semiconductor with strong magnetic anisotropy, where the interaction of excitons with the magnetic order enables the optical identification of different magnetic phases. Here, we study the magnetic anisotropy of multi-layer CrSBr inside a three-axis vector magnet and correlate magnetic order and optical transitions in emission and absorption. We identify layer by layer switching of the magnetization through drastic changes of the optical emission and absorption energy and strength as a function of the applied magnetic field. We correlate optical transitions in reflection spectra with photoluminescence (PL) emission using a transfer-matrix analysis and find that ferromagnetic and antiferromagnetic order between layers can coexist in the same crystal. In the multi-peak PL emission the intensity of energetically lower lying transitions reduces monotonously with increasing field strength whereas energetically higher lying transitions around the bright exciton $X_B$ brighten close to the saturation field. Using this contrasting behavior we can therefore correlate transitions with each other.

cond-mat.mtrl-sci↗

arXiv2025

Engineering Andreev Bound States for Thermal Sensing in Proximity Josephson Junctions

The thermal response of proximity Josephson junctions (JJs) is governed by the temperature ($T$)-dependent occupation of Andreev bound states (ABS), making them promising candidates for sensitive thermal detection. In this study, we systematically engineer ABS to enhance the thermal sensitivity of the critical current ($I_c$) of proximity JJs, quantified as $|\,dI_c/dT\,|$ for the threshold readout scheme and $|\,dI_c/dT \cdot I_c^{-1}\,|$ for the inductive readout scheme. Using a gate-tunable graphene-based JJ platform, we explore the impact of key parameters -- including channel length, transparency, carrier density, and superconducting material -- on the thermal response. Our results reveal that the proximity-induced superconducting gap plays a crucial role in optimizing thermal sensitivity. Notably, we see a maximum $|\,dI_c/dT \cdot I_c^{-1}\,|$ value of $0.6\,\mathrm{K}^{-1}$ at low temperatures with titanium-based graphene JJs. By demonstrating a systematic approach to engineering ABS in proximity JJs, this work establishes a versatile framework for optimizing thermal sensors and advancing the study of ABS-mediated transport.

cond-mat.supr-con↗

arXiv2025

Quantum interference and occupation control in high harmonic generation from monolayer $WS_2$

Two-dimensional hexagonal materials such as transition metal dichalcogenides exhibit valley degrees of freedom, offering fascinating potential for valley-based quantum computing and optoelectronics. In nonlinear optics, the K and K' valleys provide excitation resonances that can be used for ultrafast control of excitons, Bloch oscillations, and Floquet physics. Under intense laser fields, however, the role of coherent carrier dynamics away from the K/K' valleys is largely unexplored. In this study, we observe quantum interferences in high harmonic generation from monolayer $WS_2$ as laser fields drive electrons from the valleys across the full Brillouin zone. In the perturbative regime, interband resonances at the valleys enhance high harmonic generation through multi-photon excitations. In the strong-field regime, the high harmonic spectrum is sensitively controlled by light-driven quantum interferences between the interband valley resonances and intraband currents originating from electrons occupying various points in the Brillouin zone, also away from K/K' valleys such as $Γ$ and M. Our experimental observations are in strong agreement with quantum simulations, validating their interpretation. This work proposes new routes for harnessing laser-driven quantum interference in two-dimensional hexagonal systems and all-optical techniques to occupy and read-out electronic structures in the full Brillouin zone via strong-field nonlinear optics, advancing quantum technologies.

physics.optics↗

arXiv2025

Highly tunable valley polarization of potential-trapped moiré excitons in WSe2/WS2 heterojunctions

Moiré superlattices created by stacking atomic layers of transition metal dichalcogenide semiconductors have emerged as a class of fascinating artificial photonic and electronic materials. An appealing attribute of these structures is the inheritance of the valley degree of freedom from the constituent monolayers. Recent studies show evidence that the valley polarization of the moiré excitons is highly tunable. In heterojunctions of WSe2/WS2, marked improvement in valley polarization is observed by increasing optical excitation power, a behavior that is quite distinct from the monolayers, and lacks a clear understanding so far. In this work, we show that this highly tunable valley property arises from filling of the moiré superlattice, which provides an intriguing mechanism for engineering these quantum opto-valleytronic platforms. Our data further demonstrate that the long-range electron-hole exchange interaction, despite being significantly weakened in the junctions, is the dominant source of moiré exciton intervalley scattering at low population. Using magnetic field tuning, we quantitatively determine the exchange interaction strength to be 0.03 meV and 0.24 meV for 0- and 60-degrees twisted samples respectively in our experiments, about one order of magnitude weaker than that in the monolayers.

cond-mat.mes-hall↗

arXiv2025

Spectral signature of periodic modulation and sliding of pseudogap state in moire system

The nature of the pseudogap state is widely believed as a key to understanding the pairing mechanism underlying unconventional superconductivity. Over the past two decades, significant efforts have been devoted to searching for spontaneous symmetry breaking or potential order parameters associated with these pseudogap states, aiming to better characterize their properties. Recently, pseudogap states have also been realized in moire systems with extensive gate tunability, yet their local electronic structure remains largely unexplored8. In this study, we report the observation of gate-tunable spontaneous symmetry breaking and sliding behavior of the pseudogap state in magic-angle twisted bilayer graphene (MAtBG) using spectroscopic imaging scanning tunneling microscopy. Our spectroscopy reveals a distinct pseudogap at 4.4 K within the doping range -3 < v < -2. Spectroscopic imaging highlights a gap size modulation at moire scale that is sensitive to the filling, indicative of a wave-like fluctuating pseudogap feature. Specifically, the positions of gap size minima (GSM) coincide with regions of the highest local density of states (LDOS) at the filling v = -2.63, but a unidirectional sliding behavior of GSM is observed for other fillings. In addition, the pseudogap size distribution at certain doping levels also causes a clear nematic order, or an anisotropic gap distribution. Our results have shed light on the complex nature of this pseudogap state, revealing critical insights into the phase diagram of correlated electron systems.

cond-mat.mes-hall↗

arXiv2025

Spin injection and detection in all-van der Waals 2D devices

In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe$_3$GeTe$_2$ (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inject and detect spins in the graphene channel. The hBN tunnel barrier provides a high-quality interface between the ferromagnetic electrodes and graphene, eliminating the conductivity mismatch problem, thus ensuring efficient spin injection and detection with spin injection efficiencies of up to $P=40$\%. Our results demonstrate that FGT/hBN/graphene heterostructures form a promising platform for realizing 2D van der Waals spintronic devices.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable band-edge in few-layer MoS$_2$

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the $K$-points, whereas in multilayers, they shift to the $Q$-points, midway between the $Γ$ and $K$ points. In this study, we conduct magnetotransport experiments to measure the occupation in the $Q$ and $K$ valleys in fourlayer molybdenum disulfide (MoS$_2$). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid $k\cdot p$ tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS$_2$, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.

cond-mat.mes-hall↗

arXiv2025

Anomalous Thickness Dependence of the Vortex Pearl Length in Few-Layer NbSe2

The coexistence of multiple types of orders is a common thread in condensed matter physics and unconventional superconductors. The nature of superconducting orders may be unveiled by analyzing local perturbations such as vortices. For thin films, the vortex magnetic profile is characterized by the Pearl-length Λ, which is inversely proportional to the 2D superfluid density; hence, normally, also inversely proportional to the film thickness, d. Here we employ the scanning SQUID-on-tip microscopy to measure Λ in NbSe2 flakes with thicknesses ranging from N=3 to 53 layers. For N>10, we find the expected dependence Λ{\varpropto}1/d. However, six-layer films show a sharp increase of Λ deviating by a factor of three from the expected value. This value remains fixed for N=3 to 6. This unexpected behavior suggests the competition between two orders; one residing only on the first and last layers of the film while the other prevails in all layers.

cond-mat.supr-con↗

arXiv2025

Launching Focused and Spatially Confined Phonon-Polaritons in Hexagonal Boron Nitride

Phonon-polaritons offer significant opportunities for low-loss, subdiffractional light guiding at the nanoscale. Despite extensive efforts to enhance control in polaritonic media, focused and spatially confined phonon-polariton waves have only been realized in in-plane-anisotropic crystals (e.g., MoO$_3$) and remain elusive in in-plane-isotropic materials (e.g., hexagonal boron nitride, hBN). In this study, we introduce a novel approach to launching phonon-polaritons by leveraging hBN subwavelength cavities at the Au/SiO$_2$ interface, enabling efficient coupling of cavities to the far-field component of mid-infrared light. Utilizing standard lithographic techniques, we fabricated subwavelength cavities of various shapes and sizes, demonstrating strong field enhancement, resonant mode localization, and generation of propagating phonon-polaritons with well-defined spatial structure. The cavity geometry governs wavefront curvature, spatial confinement, and polariton focusing, providing control over their propagation and achieving record-high in-plane confinement up to $λ/70$. Scattering-type scanning near-field optical microscopy reveals the real-space optical contrast of these cavity-launched modes, allowing for detailed characterization. We believe that our cavity-based approach to phonon-polariton focusing in isotropic media will pave the way for advanced nanophotonic applications.

cond-mat.mes-hall↗

arXiv2025

Spin valve effect in junctions with a single ferromagnet

Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magnetization in ferromagnetic elements. Whereas conventional spin valves unavoidably require at least two ferromagnetic elements, here we demonstrate a van der Waals spin valve based on a tunnel junction that comprises only one such ferromagnetic layer. Our devices combine a Fe3GeTe2 electrode acting as spin injector together with a paramagnetic tunnel barrier, formed by a CrBr3 multilayer operated above its Curie temperature. We show that these devices exhibit a conductance modulation with values comparable to that of conventional spin valves. A quantitative analysis of the magnetoconductance that accounts for the field-induced magnetization of CrBr3, and that includes the effect of exchange interaction, confirms that the spin valve effect originates from the paramagnetic response of the barrier, in the absence of spontaneous magnetization in CrBr3.

cond-mat.mtrl-sci↗

arXiv2025

Magnetoelectric Control of Helical Light Emission in a Moiré Chern Magnet

Magnetoelectric effects and their coupling to light helicity are important for both fundamental science and applications in sensing, communication, and data storage. Traditional approaches require complex device architectures, involving separate spin-injection, ferromagnetic, and optically active layers. Recently, the emergence of 2D semiconductor moiré superlattices with flat Chern bands and strong light-matter interactions has established a simple yet powerful platform for exploring the coupling between photon, electron, and spin degrees of freedom. Here, we report efficient current control of spontaneous ferromagnetism and associated helicity of light emission in moiré MoTe2 bilayer - a system which hosts a rich variety of topological phases, including newly discovered zero-field fractional Chern insulators. We show that the current control is effective over a wide range of doping of the first moiré Chern band, implying the uniformity of the Berry curvature distribution over the flat band. By setting the system into the anomalous Hall metal phase, a current as small as 10nA is sufficient to switch the magnetic order, a substantial improvement over both conventional spin torque architectures and other moiré systems. The realized current control of ferromagnetism leads to continuous tuning of trion photoluminescence helicity from left to right circular via spin/valley Hall torque at zero magnetic field. Our results pave the way for topological opto-spintronics based on semiconductors with synthetic flat Chern bands.

cond-mat.mes-hall↗

arXiv2025

A two-dimensional semiconductor-semimetal drag hybrid

Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron interactions and collective excitations. Yet the materials compatible for such investigations remain limited to date. Especially, gapped 2D semiconductors with inherently large correlations over a broad gate range have been rarely accessible at low temperatures. Here, we show the emergence of a large drag response (drag resistance $R_{\text{drag}}$ at the order of k$Ω$, with a passive-to-active drag ratio up to $\sim$ 0.6) in a semiconductor-semimetal hybrid, realized in a graphene-MoS$_{2}$ heterostructure isolated by an ultrathin 3 nm hexagonal boron nitride (h-BN) dielectric. We observe a crossover of $T$ to $T^{2}$ dependence of $R_{\text{drag}}$, separated by a characteristic temperature $T_{d} \sim E_{F}/k_{F}d$ ($d$ being the interlayer distance), in echo with the presence of a metal-insulator transition in the semiconducting MoS$_{2}$. Interestingly, the current nanostructure allows the decoupling of intralayer interaction-driven drag response by varying density in one layer with that in the other layer kept constant. A large Wigner-Seitz radius $r_{s}$ ($>$ 10 within the density range of 1 to $4 \times 10^{12}~\mathrm{cm}^{-2}$) in the massive Schrödinger carriers in MoS$_{2}$ is thus identified to dominate the quadratic dependence of total carriers in the drag system, while the massless Dirac carriers in graphene induce negligible drag responses as a function of carrier density. Our findings establish semiconductor-semimetal hybrid as a platform for studying unique interaction physics in Coulomb drag systems.

cond-mat.mes-hall↗

arXiv2025

Polar Vortex Superstructure and Its Coupling with Correlated Electrons in Quasiperiodic Moire Crystal

Nanoscale polar structures are significant for understanding polarization processes in low-dimensional systems and hold potential for developing high-performance electronics. Here, we demonstrate a polar vortex superstructure arising from the reconstructed moiré patterns in twisted bilayer graphene aligned with hexagonal boron nitride. Scanning tunneling microscopy reveals spatially modulated charge polarization, while theoretical simulations indicate that the in-plane polarization field forms an array of polar vortices. Notably, this polar field is gate-tunable, exhibiting an unconventional gate-tunable polar sliding and screening process. Moreover, its interaction with electron correlations in twisted bilayer graphene leads to modulated correlated states. Our findings establish moiré pattern reconstruction as a powerful strategy for engineering nanoscale polar structures and emergent quantum phases in van der Waals materials.

cond-mat.mes-hall↗

arXiv2025

Hidden States and Dynamics of Fractional Fillings in tMoTe2 Moiré Superlattices

The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe2 bilayers (tMoTe2). Experiments to date have revealed Chern insulators from hole doping at v = -1, -2/3, -3/5, and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators (FTI), fractional quantum spin Hall (FQSH) states, and non-abelian fractional states. Here we employ transient optical spectroscopy on tMoTe2 to reveal nearly 20 hidden states at fractional fillings that are absent in static optical sensing or transport measurements. A pump pulse selectively excites charge across the correlated or pseudo gaps, leading to the disordering (melting) of correlated states. A probe pulse detects the subsequent melting and recovery dynamics via exciton and trion sensing. Besides the known states, we observe additional fractional fillings between v = 0 and -1 and a large number of states on the electron doping side (v > 0). Most importantly, we observe new states at fractional fillings of the Chern bands at v = -4/3, -3/2, -5/3, -7/3, -5/2, and -8/3. These states are potential candidates for the predicted exotic topological phases. Moreover, we show that melting of correlated states occurs on two distinct time scales, 2-4 ps and 180-270 ps, attributed to electronic and phonon mechanisms, respectively. We discuss the differing dynamics of the electron and hole doped states from the distinct moiré conduction and valence bands.

cond-mat.str-el↗

arXiv2025

Exciton self-trapping in twisted hexagonal boron nitride homostructures

One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons.

cond-mat.mtrl-sci↗