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Themis Prodromakis

Publications and source records attributed to Themis Prodromakis.

At least 37 records · Page 2Linked to original sources

A Multi-Channel Auditory Signal Encoder with Adaptive Resolution Using Volatile Memristors

We demonstrate and experimentally validate an end-to-end hybrid CMOS-memristor auditory encoder that realises adaptive-threshold, asynchronous delta-modulation (ADM)-based spike encoding by exploiting the inherent volatility of HfTiOx devices. A spike-triggered programming pulse rapidly raises the ADM threshold Delta (desensitisation); the device's volatility then passively lowers Delta when activity subsides (resensitisation), emphasising onsets while restoring sensitivity without static control energy. Our prototype couples an 8-channel 130 nm encoder IC to off-chip HfTiOx devices via a switch interface and an off-chip controller that monitors spike activity and issues programming events. An on-chip current-mirror transimpedance amplifier (TIA) converts device current into symmetric thresholds, enabling both sensitive and conservative encoding regimes. Evaluated with gammatone-filtered speech, the adaptive loop-at matched spike budget-sharpens onsets and preserves fine temporal detail that a fixed-Delta baseline misses; multi-channel spike cochleagrams show the same trend. Together, these results establish a practical hybrid CMOS-memristor pathway to onset-salient, spike-efficient neuromorphic audio front-ends and motivate low-power single-chip integration.

eess.AS↗

Multibit Ferroelectric Memcapacitor for Non-volatile Analogue Memory and Reconfigurable Filtering

Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that achieves more than eight stable, reprogrammable capacitance states (3-bit encoding) within a non-volatile window of 24~pF. The device switches at low voltages (3~V), with each state exhibiting long retention (10^5~s) and high endurance (10^6 cycles), ensuring reliable multi-level operation. At the nanoscale, multistate charge retention was directly visualised using atomic force microscopy, confirming the robustness of individual states beyond macroscopic measurements. As a proof of concept, the capacitor was integrated into a high-pass filter, where the programmed capacitive states shift the cutoff frequency over 5~kHz, establishing circuit-level viability. This work demonstrates the feasibility of CMOS-compatible, non-volatile, analogue memory based on ferroelectric HfZrO, paving the way for adaptive RF filters, reconfigurable analogue front-ends, and neuromorphic electronics.

cond-mat.mtrl-sci↗

TrIM, Triangular Input Movement Systolic Array for Convolutional Neural Networks: Dataflow and Analytical Modelling

In order to follow the ever-growing computational complexity and data intensity of state-of-the-art AI models, new computing paradigms are being proposed. These paradigms aim at achieving high energy efficiency by mitigating the Von Neumann bottleneck that relates to the energy cost of moving data between the processing cores and the memory. Convolutional Neural Networks (CNNs) are susceptible to this bottleneck, given the massive data they have to manage. Systolic arrays (SAs) are promising architectures to mitigate data transmission cost, thanks to high data utilization of Processing Elements (PEs). These PEs continuously exchange and process data locally based on specific dataflows (such as weight stationary and row stationary), in turn reducing the number of memory accesses to the main memory. In SAs, convolutions are managed either as matrix multiplications or exploiting the raster-order scan of sliding windows. However, data redundancy is a primary concern affecting area, power, and energy. In this paper, we propose TrIM: a novel dataflow for SAs based on a Triangular Input Movement and compatible with CNN computing. TrIM maximizes the local input utilization, minimizes the weight data movement, and solves the data redundancy problem. Furthermore, TrIM does not incur the significant on-chip memory penalty introduced by the row stationary dataflow. When compared to state-of-the-art SA dataflows, the high data utilization offered by TrIM guarantees ~10X less memory access. Furthermore, considering that PEs continuously overlap multiplications and accumulations, TrIM achieves high throughput (up to 81.8% higher than row stationary), other than requiring a limited number of registers (up to 15.6X fewer registers than row stationary).

cs.AI↗

DiP: A Scalable, Energy-Efficient Systolic Array for Matrix Multiplication Acceleration

Transformers are gaining increasing attention across Natural Language Processing (NLP) application domains due to their outstanding accuracy. However, these data-intensive models add significant performance demands to the existing computing architectures. Systolic array architectures, adopted by commercial AI computing platforms like Google TPUs, offer energy-efficient data reuse but face throughput and energy penalties due to input-output synchronization via First-In-First-Out (FIFO) buffers. This paper proposes a novel scalable systolic array architecture featuring Diagonal-Input and Permutated weight stationary (DiP) dataflow for matrix multiplication acceleration. The proposed architecture eliminates the synchronization FIFOs required by state-of-the-art weight stationary systolic arrays. Beyond the area, power, and energy savings achieved by eliminating these FIFOs, DiP architecture maximizes the computational resource utilization, achieving up to 50\% throughput improvement over conventional weight stationary architectures. Analytical models are developed for both weight stationary and DiP architectures, including latency, throughput, time to full PEs utilization (TFPU), and FIFOs overhead. A comprehensive hardware design space exploration using 22nm commercial technology demonstrates DiP's scalability advantages, achieving up to a 2.02x improvement in energy efficiency per area. Furthermore, DiP outperforms TPU-like architectures on transformer workloads from widely-used models, delivering energy improvement up to 1.81x and latency improvement up to 1.49x. At a 64x64 size with 4096 PEs, DiP achieves a peak throughput of 8.192 TOPS with energy efficiency 9.548 TOPS/W.

cs.AR↗

3D-TrIM: A Memory-Efficient Spatial Computing Architecture for Convolution Workloads

The Von Neumann bottleneck, which relates to the energy cost of moving data from memory to on-chip core and vice versa, is a serious challenge in state-of-the-art AI architectures, like Convolutional Neural Networks' (CNNs) accelerators. Systolic arrays exploit distributed processing elements that exchange data with each other, thus mitigating the memory cost. However, when involved in convolutions, data redundancy must be carefully managed to avoid significant memory access overhead. To overcome this problem, TrIM has been recently proposed. It features a systolic array based on an innovative dataflow, where input feature map (ifmap) activations are locally reused through a triangular movement. However, ifmaps still suffer from memory accesses overhead. This work proposes 3D-TrIM, an upgraded version of TrIM that addresses the memory access overhead through few extra shadow registers. In addition, due to a change in the architectural orientation, the local shift register buffers are now shared between different slices, thus improving area and energy efficiency. An architecture of 576 processing elements is implemented on commercial 22 nm technology and achieves an area efficiency of 4.47 TOPS/mm$^2$ and an energy efficiency of 4.54 TOPS/W. Finally, 3D-TrIM outperforms TrIM by up to $3.37\times$ in terms of operations per memory access considering CNN topologies like VGG-16 and AlexNet.

cs.AR↗

A Hybrid Edge Classifier: Combining TinyML-Optimised CNN with RRAM-CMOS ACAM for Energy-Efficient Inference

In recent years, the development of smart edge computing systems to process information locally is on the rise. Many near-sensor machine learning (ML) approaches have been implemented to introduce accurate and energy efficient template matching operations in resource-constrained edge sensing systems, such as wearables. To introduce novel solutions that can be viable for extreme edge cases, hybrid solutions combining conventional and emerging technologies have started to be proposed. Deep Neural Networks (DNN) optimised for edge application alongside new approaches of computing (both device and architecture -wise) could be a strong candidate in implementing edge ML solutions that aim at competitive accuracy classification while using a fraction of the power of conventional ML solutions. In this work, we are proposing a hybrid software-hardware edge classifier aimed at the extreme edge near-sensor systems. The classifier consists of two parts: (i) an optimised digital tinyML network, working as a front-end feature extractor, and (ii) a back-end RRAM-CMOS analogue content addressable memory (ACAM), working as a final stage template matching system. The combined hybrid system exhibits a competitive trade-off in accuracy versus energy metric with $E_{front-end}$ = $96.23 nJ$ and $E_{back-end}$ = $1.45 nJ$ for each classification operation compared with 78.06$μ$J for the original teacher model, representing a 792-fold reduction, making it a viable solution for extreme edge applications.

cs.LG↗

A 9T4R RRAM-Based ACAM for Analogue Template Matching at the Edge

The continuous shift of computational bottlenecks to the memory access and data transfer, especially for AI applications, poses the urgent needs of re-engineering the computer architecture fundamentals. Many edge computing applications, like wearable and implantable medical devices, introduce increasingly more challenges to conventional computing systems due to the strict requirements of area and power at the edge. Emerging technologies, like Resistive RAM (RRAM), have shown a promising momentum in developing neuro-inspired analogue computing paradigms capable of achieving high classification capabilities alongside high energy efficiency. In this work, we present a novel RRAM-based Analogue Content Addressable Memory (ACAM) for on-line analogue template matching applications. This ACAM-based template matching architecture aims to achieve energy-efficient classification where low energy is of utmost importance. We are showcasing a highly tuneable novel RRAM-based ACAM pixel implemented using a commercial 180nm CMOS technology and in-house RRAM technology and exhibiting low energy dissipation of approximately 0.036pJ and 0.16pJ for mismatch and match, respectively, at 66MHz with 3V voltage supply. A proof-of-concept system-level implementation based on this novel pixel design is also implemented in 180nm.

eess.SY↗

L-Sort: On-chip Spike Sorting with Efficient Median-of-Median Detection and Localization-based Clustering

Spike sorting is a critical process for decoding large-scale neural activity from extracellular recordings. The advancement of neural probes facilitates the recording of a high number of neurons with an increase in channel counts, arising a higher data volume and challenging the current on-chip spike sorters. This paper introduces L-Sort, a novel on-chip spike sorting solution featuring median-of-median spike detection and localization-based clustering. By combining the median-of-median approximation and the proposed incremental median calculation scheme, our detection module achieves a reduction in memory consumption. Moreover, the localization-based clustering utilizes geometric features instead of morphological features, thus eliminating the memory-consuming buffer for containing the spike waveform during feature extraction. Evaluation using Neuropixels datasets demonstrates that L-Sort achieves competitive sorting accuracy with reduced hardware resource consumption. Implementations on FPGA and ASIC (180 nm technology) demonstrate significant improvements in area and power efficiency compared to state-of-the-art designs while maintaining comparable accuracy. If normalized to 22 nm technology, our design can achieve roughly $\times 10$ area and power efficiency with similar accuracy, compared with the state-of-the-art design evaluated with the same dataset. Therefore, L-Sort is a promising solution for real-time, high-channel-count neural processing in implantable devices.

eess.SP↗

TrIM, Triangular Input Movement Systolic Array for Convolutional Neural Networks: Architecture and Hardware Implementation

Modern hardware architectures for Convolutional Neural Networks (CNNs), other than targeting high performance, aim at dissipating limited energy. Reducing the data movement cost between the computing cores and the memory is a way to mitigate the energy consumption. Systolic arrays are suitable architectures to achieve this objective: they use multiple processing elements that communicate each other to maximize data utilization, based on proper dataflows like the weight stationary and row stationary. Motivated by this, we have proposed TrIM, an innovative dataflow based on a triangular movement of inputs, and capable to reduce the number of memory accesses by one order of magnitude when compared to state-of-the-art systolic arrays. In this paper, we present a TrIM-based hardware architecture for CNNs. As a showcase, the accelerator is implemented onto a Field Programmable Gate Array (FPGA) to execute the VGG-16 and AlexNet CNNs. The architecture achieves a peak throughput of 453.6 Giga Operations per Second, outperforming a state-of-the-art row stationary systolic array up to ~3x in terms of memory accesses, and being up to ~11.9x more energy-efficient than other FPGA accelerators.

cs.AR↗

An Energy-efficient Capacitive-RRAM Content Addressable Memory

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS solutions. This article introduced an energy-efficient 3T1R1C TCAM cooperating with capacitor dividers and RRAM devices. The RRAM as a storage element also acts as a switch to the capacitor divider while searching for content. CAM cells benefit from working parallel in an array structure. We implemented a 64 x 64 array and digital controllers to perform with an internal built-in clock frequency of 875MHz. Both data searches and reads take three clock cycles. Its worst average energy for data match is reported to be 1.71fJ/bit-search and the worst average energy for data miss is found at 4.69fJ/bit-search. The prototype is simulated and fabricated in 0.18um technology with in-lab RRAM post-processing. Such memory explores the charge domain searching mechanism and can be applied to data centers that are power-hungry.

eess.SY↗

Text Classification in Memristor-based Spiking Neural Networks

Memristors, emerging non-volatile memory devices, have shown promising potential in neuromorphic hardware designs, especially in spiking neural network (SNN) hardware implementation. Memristor-based SNNs have been successfully applied in a wide range of various applications, including image classification and pattern recognition. However, implementing memristor-based SNNs in text classification is still under exploration. One of the main reasons is that training memristor-based SNNs for text classification is costly due to the lack of efficient learning rules and memristor non-idealities. To address these issues and accelerate the research of exploring memristor-based spiking neural networks in text classification applications, we develop a simulation framework with a virtual memristor array using an empirical memristor model. We use this framework to demonstrate a sentiment analysis task in the IMDB movie reviews dataset. We take two approaches to obtain trained spiking neural networks with memristor models: 1) by converting a pre-trained artificial neural network (ANN) to a memristor-based SNN, or 2) by training a memristor-based SNN directly. These two approaches can be applied in two scenarios: offline classification and online training. We achieve the classification accuracy of 85.88% by converting a pre-trained ANN to a memristor-based SNN and 84.86% by training the memristor-based SNN directly, given that the baseline training accuracy of the equivalent ANN is 86.02%. We conclude that it is possible to achieve similar classification accuracy in simulation from ANNs to SNNs and from non-memristive synapses to data-driven memristive synapses. We also investigate how global parameters such as spike train length, the read noise, and the weight updating stop conditions affect the neural networks in both approaches.

cs.NE↗

A tool for emulating neuromorphic architectures with memristive models and devices

Memristors have shown promising features for enhancing neuromorphic computing concepts and AI hardware accelerators. In this paper, we present a user-friendly software infrastructure that allows emulating a wide range of neuromorphic architectures with memristor models. This tool empowers studies that exploit memristors for online learning and online classification tasks, predicting memristor resistive state changes during the training process. The versatility of the tool is showcased through the capability for users to customise parameters in the employed memristor and neuronal models as well as the employed learning rules. This further allows users to validate concepts and their sensitivity across a wide range of parameters. We demonstrate the use of the tool via an MNIST classification task. Finally, we show how this tool can also be used to emulate the concepts under study in-silico with practical memristive devices via appropriate interfacing with commercially available characterisation tools.

cs.NE↗

A CMOS-based Characterisation Platform for Emerging RRAM Technologies

Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device.

cs.ET↗

Selectively biased tri-terminal vertically-integrated memristor configuration

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively limited. Here we propose a vertically stacked memristor configuration with a shared middle electrode. We study the compound resistive states presented by the combined in-series devices and we alter them either by controlling each device separately, or by altering the full configuration, which depends on selective usage of the middle floating electrode. The shared middle electrode enables a rare look into the combined system, which is not normally available in vertically stacked devices. In the course of this study it was found that separate switching of individual devices carries over its effects to the complete device (albeit non-linearly), enabling increased resistive state range, which leads to a larger number of distinguishable states (above SNR variance limits) and hence enhanced device memory. Additionally, by applying a switching stimulus to the external electrodes it is possible to switch both devices simultaneously, making the entire configuration a voltage divider with individual memristive components. Through usage of this type of configuration and by taking advantage of the voltage division, it is possible to surge-protect fragile devices, while it was also found that simultaneous reset of stacked devices is possible, significantly reducing the required reset time in larger arrays.

physics.app-ph↗

NeuroPack: An Algorithm-level Python-based Simulator for Memristor-empowered Neuro-inspired Computing

Emerging two terminal nanoscale memory devices, known as memristors, have over the past decade demonstrated great potential for implementing energy efficient neuro-inspired computing architectures. As a result, a wide-range of technologies have been developed that in turn are described via distinct empirical models. This diversity of technologies requires the establishment of versatile tools that can enable designers to translate memristors' attributes in novel neuro-inspired topologies. In this paper, we present NeuroPack, a modular, algorithm level Python-based simulation platform that can support studies of memristor neuro-inspired architectures for performing online learning or offline classification. The NeuroPack environment is designed with versatility being central, allowing the user to chose from a variety of neuron models, learning rules and memristors models. Its hierarchical structure, empowers NeuroPack to predict any memristor state changes and the corresponding neural network behavior across a variety of design decisions and user parameters options. The use of NeuroPack is demonstrated herein via an application example of performing handwritten digit classification with the MNIST dataset and an existing empirical model for metal-oxide memristors.

cs.ET↗

An FPGA-based System for Generalised Electron Devices Testing

Electronic systems are becoming more and more ubiquitous as our world digitises. Simultaneously, even basic components are experiencing a wave of improvements with new transistors, memristors, voltage/current references, data converters, etc, being designed every year by hundreds of R&D groups world-wide. To date, the workhorse for testing all these designs has been a suite of lab instruments including oscilloscopes and signal generators, to mention the most popular. However, as components become more complex and pin numbers soar, the need for more parallel and versatile testing tools also becomes more pressing. In this work, we describe and benchmark an FPGA system developed that addresses this need. This general purpose testing system features a 64-channel source-meter unit (SMU), and 2x banks of 32 digital pins for digital I/O. We demonstrate that this bench-top system can obtain $170 pA$ current noise floor, $40 ns$ pulse delivery at $\pm13.5 V$ and $12 mA$ maximum current drive/channel. We then showcase the instrument's use in performing a selection of three characteristic measurement tasks: a) current-voltage (IV) characterisation of a diode and a transistor, b) fully parallel read-out of a memristor crossbar array and c) an integral non-linearity (INL) test on a DAC. This work introduces a down-scaled electronics laboratory packaged in a single instrument which provides a shift towards more affordable, reliable, compact and multi-functional instrumentation for emerging electronic technologies.

eess.SP↗

Emulating homoeostatic effects with metal-oxide memristors T-dependence

Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by exploiting the tuneable resistive state of memristors with other physical characteristics being ignored. Here, we report on the thermal properties of metal-oxide memristors and demonstrate how these can be used to emulate a fundamental function of biological neurons: homeostasis. We show that thermal control mechanisms, frequently dismissed for their generally slow and broad-brush granularity, may in fact be an appropriate approach to emulating similarly slow and broad-brush biological mechanisms due to their extreme simplicity of implementation. We further demonstrate that metal-oxide memristors can be utilised as thermometers and exhibit a programmable temperature sensitivity. This work paves the way towards future systems that employ the rich physical properties of memristors, beyond their electrical state-tuneability, to power a new generation of advanced electronic devices.

cs.ET↗

Palimpsest Memories Stored in Memristive Synapses

Biological synapses store multiple memories on top of each other in a palimpsest fashion and at different timescales. Palimpsest consolidation is facilitated by the interaction of hidden biochemical processes that govern synaptic efficacy during varying lifetimes. This arrangement allows idle memories to be temporarily overwritten without being forgotten, in favour of new memories utilised in the short-term. While embedded artificial intelligence can greatly benefit from such functionality, a practical demonstration in hardware is still missing. Here, we show how the intrinsic properties of metal-oxide volatile memristors emulate the hidden processes that support biological palimpsest consolidation. Our memristive synapses exhibit an expanded doubled capacity which can protect a consolidated long-term memory while up to hundreds of uncorrelated short-term memories temporarily overwrite it. The synapses can also implement familiarity detection of previously forgotten memories. Crucially, palimpsest operation is achieved automatically and without the need for specialised instructions. We further demonstrate a practical adaptation of this technology in the context of image vision. This showcases the use of emerging memory technologies to efficiently expand the capacity of artificial intelligence hardware towards more generalised learning memories.

q-bio.NC↗