arXiv subjects

Themis Prodromakis

Publications and source records attributed to Themis Prodromakis.

40 records · Page 3Linked to original sources

arXiv2020

Frequency Response of Metal-Oxide Memristors

Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based AC circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under an AC perturbation in a range of frequencies, from 10^3 to 10^7 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cut-off frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behaviour across distinct material systems and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterising their frequency dependent characteristics, providing useful insights for their use in reconfigurable AC circuits.

physics.app-ph↗

arXiv2018

A technology agnostic RRAM characterisation methodology protocol

The emergence of memristor technologies brings new prospects for modern electronics via enabling novel in-memory computing solutions and affordable and scalable reconfigurable hardware implementations. Several competing memristor technologies have been presented with each bearing distinct performance metrics across multi-bit memory capacity, low-power operation, endurance, retention and stability. Application needs however are constantly driving the push towards higher performance, which necessitates the introduction of standard characterisation protocols for fair benchmarking. At the same time, opportunities for innovation are missed by focusing on excessively narrow performance aspects. To that end our work presents a complete, technology agnostic, characterisation methodology based on established techniques that are adapted to memristors/RRAM characterisation needs. Our approach is designed to extract information on all aspects of device behaviour, ranging from deciphering underlying physical mechanisms to benchmarking across a variety of electrical performance metrics that can in turn support the generation of device models.

physics.app-ph↗

arXiv2017

Charge-based computing with analogue reconfigurable gates

As the world enters the age of ubiquitous computing, the need for reconfigurable hardware operating close to the fundamental limits of energy consumption becomes increasingly pressing. Simultaneously, scaling-driven performance improvements within the framework of traditional analogue and digital design become progressively more restricted by fundamental physical constraints. Thus, a true paradigm shift in electronics design is required for fuelling the next big burst in technology. Here we lay the foundations of a new design paradigm that fuses analogue and digital thinking by combining digital electronics with memristive devices for achieving charge-based computation; information processing where every dissipated charge counts. This is realised by introducing memristive devices into standard logic gates, thus rendering them reconfigurable and able to perform analogue computation at a power cost close to digital. The power of this concept is then showcased by experimentally demonstrating a hardware data clusterer and a fuzzy NAND gate using this principle.

cs.ET↗

arXiv2017

Multibit memory operation of metal-oxide bi-layer memristors

In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. We finally demonstrate a 5.5-bit memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.

cond-mat.mes-hall↗