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arXiv · 1906.09758

Voltage-controlled skyrmion-based artificial synapse in a synthetic antiferromagnet

Ziyang Yu·Maokang Shen·Zhongming Zeng·Shiheng Liang·Yong Liu·Ming Chen·Zhenhua Zhang·Zhihong Lu·Yue Zhang·Rui Xiong
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Abstract

Spintronics exhibits significant potential in neuromorphic computing system with high speed, high integration density, and low dissipation. In this letter, we propose an ultralow-dissipation spintronic memristor composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate. Skyrmions/skyrmion bubbles can be generated in the upper layer of SAF with weak anisotropy energy (Ea). With a weak electric field on the heterostructure, the interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces the variation of the resistance of a magnetic tunneling junction. The synapse based on this principle may manipulate the weight in a wide range at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.

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Ziyang Yu, Maokang Shen, Zhongming Zeng, Shiheng Liang, Yong Liu, Ming Chen, Zhenhua Zhang, Zhihong Lu, Yue Zhang, Rui Xiong. 2019-06-24. Voltage-controlled skyrmion-based artificial synapse in a synthetic antiferromagnet. https://arxiv.org/abs/1906.09758

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