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arXiv · 2001.02846

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Yulu Ren·Qiaoqiao Li·Wenhui Wan·Yong Liu·Yanfeng Ge
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Abstract

Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI$_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI$_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.

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Yulu Ren, Qiaoqiao Li, Wenhui Wan, Yong Liu, Yanfeng Ge. 2020-01-09. High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides. https://doi.org/10.1103/physrevb.101.134421

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