Regulating Anderson Localization with Structural Defect Disorder

Mouyang Cheng; Haoxiang Chen; Ji Chen

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arXiv · 2303.00997

Regulating Anderson Localization with Structural Defect Disorder

Mouyang Cheng·Haoxiang Chen·Ji Chen

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Abstract

Localization due to disorder has been one of the most intriguing theoretical concepts evolved in condensed matter. Here, we expand the theory of localization by considering two types of disorder at the same time, namely the original Anderson's disorder and the structural defect disorder, which has been suggested to be a key component in recently discovered two-dimensional amorphous materials. While increasing the degree of both disorders could induce localization of wavefunction in real space, we find that a small degree of structural defect disorder can significantly enhance the localization. As the degree of structural defect disorder increases, localized states quickly appear within the extended phase to enter a broad crossover region with mixed phases. Full localization occurs when structural defect disorder reaches about 10 percent, even without considering the Anderson type disorder. Our theoretical model provides a comprehensive understanding of localization in two-dimensional amorphous materials and highlights the promising tunability of their transport properties.

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Mouyang Cheng, Haoxiang Chen, Ji Chen. 2023-03-02. Regulating Anderson Localization with Structural Defect Disorder. https://arxiv.org/abs/2303.00997

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