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arXiv · 2307.08146

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Jules Fraunié·Rayan Jamil·Richard Kantelberg·Sébastien Roux·Lionel Petit·Emmanuel Lepleux·Louis Pacheco·Kenji Watanabe·Takashi Taniguchi·Vincent Jacques·Laurent Lombez·Mikhail M. Glazov·Benjamin Lassagne·Xavier Marie·Cedric Robert
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Abstract

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded hBN layer can imprint local n and p doping in a semiconducting transition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can be used as an optical probe of ferroelectricity in hBN and show that the doping density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric hBN/WSe2 van der Waals stacking as a promising optoelectronic structure.

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Jules Fraunié, Rayan Jamil, Richard Kantelberg, Sébastien Roux, Lionel Petit, Emmanuel Lepleux, Louis Pacheco, Kenji Watanabe, Takashi Taniguchi, Vincent Jacques, Laurent Lombez, Mikhail M. Glazov, Benjamin Lassagne, Xavier Marie, Cedric Robert. 2023-07-16. Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride. https://arxiv.org/abs/2307.08146

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