Low barrier ZrO$_x$-based Josephson junctions

Jaehong Choi; Maciej Olszewski; Luojia Zhang; Zhaslan Baraissov; Tathagata Banerjee; Kushagra Aggarwal; Sarvesh Chaudhari; Tomás A. Arias; David A. Muller; Valla Fatemi; Gregory D. Fuchs

doi:10.1063/5.0296881

arXiv · 2508.11593

Low barrier ZrO$_x$-based Josephson junctions

Jaehong Choi·Maciej Olszewski·Luojia Zhang·Zhaslan Baraissov·Tathagata Banerjee·Kushagra Aggarwal·Sarvesh Chaudhari·Tomás A. Arias·David A. Muller·Valla Fatemi·Gregory D. Fuchs

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Abstract

The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We theoretically estimate that zirconium oxide has excellent oxygen retention properties and experimentally verify that there is no significant oxygen diffusion leading to NbO$_x$ formation in the adjacent Nb electrode. We develop a top-down, subtractive fabrication process for Nb/Zr-ZrO$_x$/Nb Josephson junctions, which enables scalability and large-scale production of superconducting electronics. Using cross sectional scanning transmission electron microscopy, we experimentally find that depending on the Zr thickness, ZrO$_x$ tunnel barriers can be fully crystalline with chemically abrupt interfaces with niobium. Further analysis using electron energy loss spectroscopy reveals that ZrO$_x$ corresponds to tetragonal ZrO$_2$. Room temperature characterization of fabricated junctions using Simmons' model shows that ZrO$_2$ exhibits a low tunnel barrier height, which is promising in merged-element transmon applications. Low temperature transport measurements reveal sub-gap structure, while the low-voltage sub-gap resistance remains in the megaohm range.

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Jaehong Choi, Maciej Olszewski, Luojia Zhang, Zhaslan Baraissov, Tathagata Banerjee, Kushagra Aggarwal, Sarvesh Chaudhari, Tomás A. Arias, David A. Muller, Valla Fatemi, Gregory D. Fuchs. 2025-08-15. Low barrier ZrO$_x$-based Josephson junctions. https://doi.org/10.1063/5.0296881

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