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arXiv · 2510.10595

Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface

Hisakazu Matsuki·Guang Yang·Jiahui Xu·Vitaly N. Golovach·Yu He·Jiaxu Li·Alberto Hijano·Niladri Banerjee·Iuliia Alekhina·Nadia Stelmashenko·F. Sebastian Bergeret·Jason W. A. Robinson
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Abstract

A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered conductors, electron interference leads to weak localization or anti-localization; in contrast, ferromagnetic conductors support spin-dependent scattering, leading to giant magnetoresistance (GMR). By varying the thickness of Au between 4 and 28 nm in a EuS/Au/EuS spin-switches, we observe a crossover from weak anti-localization to interfacial GMR. The crossover is related to a magnetic proximity effect in Au due to electron scattering at the insulating EuS interface. The proximity-induced exchange field in Au suppresses weak anti-localization, consistent with Maekawa-Fukuyama theory. With increasing Au thickness, GMR emerges along with spin Hall magnetoresistance. These findings demonstrate spin transport governed by interfacial exchange fields, building a framework for spintronic functionality without metallic magnetism.

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Hisakazu Matsuki, Guang Yang, Jiahui Xu, Vitaly N. Golovach, Yu He, Jiaxu Li, Alberto Hijano, Niladri Banerjee, Iuliia Alekhina, Nadia Stelmashenko, F. Sebastian Bergeret, Jason W. A. Robinson. 2025-10-12. Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface. https://arxiv.org/abs/2510.10595

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