Search arXiv⌕ Search

arXiv · 2610.11421

Time-Domain Analysis of Surface Acoustic Wave Magnetoelectric Sensors

Abstract

The transient response of surface acoustic wave sensors is important for understanding their dynamic behavior, propagation delay, and response to time-varying signals. In this work, the time-domain propagation characteristics of a magnetoelectric SAW sensor based on a multilayer Love-wave delay line are investigated using complementary numerical and experimental approaches. Time-domain analysis is employed to determine the delay time and to extract the phase and group velocities, while frequency-domain analysis provides an independent characterization of the wave dispersion. Both numerically and experimentally, the phase and group velocities are found to differ, reflecting the dispersion of the Love wave in the multilayer structure. At the operating frequency of 146 MHz, the simulated group velocity obtained from wave-field tracking agrees within 0.4% with the value determined from the frequency-domain dispersion relation. The simulated delay time and group velocity also show good agreement with experiment, with deviations of 2.7% in delay time and 0.9% in group velocity. These results demonstrate the consistency of the time- and frequency-domain analyses and provide a quantitative characterization of the transient propagation behavior of SAW sensors.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Mohsen Samadi, Henrik Wolframm, Felix Weisheit, Dirk Meyners, Eckhard Quandt, Michael Höft, Martina Gerken. 2026-10-08. Time-Domain Analysis of Surface Acoustic Wave Magnetoelectric Sensors. https://arxiv.org/abs/2610.11421

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Finite Element Simulation of Microwave Technologies for PowderBased Volumetric Additive Manufacturing Processes

Volumetric additive manufacturing (VAM) is a promising field of advanced manufacturing which reduces production times of conventional 3D printing while retaining application to complex geometries. Current VAM systems are limited to photo-polymerizing resins, which reduces the general applicability across industry. This work presents exploratory finite element simulations of microwave-based VAM systems compatible with ceramic, metal, or composite powder feedstock. The simulations explore three devices -- a linear resonator, a cross interferometer, and a boundary heater -- each with potential uses in manufacturing processes for one or multiple of the considered feedstock materials. We find that with precise control of input frequency, power, and waveguide transverse modes, thermal lattices can be engineered to selectively heat regions of the feedstock, allowing direct application to VAM. Resultant lattices have cellular dimensions on the order of 1 mm, and require input powers on the order of 100 kW. With advances in microwave technologies allowing for this precision, such devices could open pathways to VAM with materials currently outside the scope of optical methods.

physics.app-ph↗

Hyperbolic dynamic friction models for viscoelastic sliding and rolling contact

This paper considers the sliding and rolling contact between viscoelastic bodies. Combining linear viscoelastic rheologies for bristle-like elements with nonlinear dynamic friction models, and under the assumption of small deformations and displacement gradients, it derives a class of viscoelasto-kinematic equations, formulated as a system of semilinear partial differential equations (PDEs) governing the evolution of the frictional force, bristle deformations, and internal state variables at the interface between the contacting bodies. The resulting system is analysed mathematically, demonstrating that linear viscoelasticity preserves the hyperbolic character of the PDE systems typically encountered in rolling contact. The proposed theory is illustrated through representative examples of both sliding and rolling contact, highlighting that these two processes, whilst often treated as distinct, may in fact exhibit closely related underlying dynamics. Overall, the framework provides a general theoretical setting applicable to a broad class of viscoelastic frictional systems.

physics.app-ph↗

Topological-Insulator Heterophase Gate Stacks for Transistor Electrostatics

Conventional gate-stack scaling reduces dielectric thickness and increases permittivity while largely treating the position and electronic character of the gate-side screening boundary as fixed. Here we show that this boundary can be engineered by converting the surface of the topological insulator Bi\textsubscript{2}Se\textsubscript{3} into insulating high-$κ$ BiF\textsubscript{3}. Position-resolved calculations reveal a gap-opened immediate amorphous-BiF\textsubscript{3}/crystalline-Bi\textsubscript{2}Se\textsubscript{3} interface and a reconstructed gap-closed Bi\textsubscript{2}Se\textsubscript{3}-derived state in the adjacent subinterface layer, accompanied by a localized interfacial dipole. Capacitor measurements independently resolve a finite series response consistent with electronic compressibility at this boundary; this response lowers the nominal stack capacitance. Despite this capacitance penalty, MoS\textsubscript{2} transistors with closely matched BiF\textsubscript{3} thicknesses and a common BiF\textsubscript{3}/MoS\textsubscript{2} channel-side material interface exhibit near-thermionic-limit switching, negligible hysteresis and substantially weaker subthreshold drain-bias dependence than BiF\textsubscript{3}-only controls. These results identify the position and electronic character of the gate-side screening boundary as additional design variables for transistor electrostatics beyond nominal dielectric capacitance.

physics.app-ph↗